The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Jan. 13, 2012
Che-cheng Chang, New Taipei, TW;
Po-chi Wu, Zhubei, TW;
Chang-yin Chen, Taipei, TW;
Zhe-hao Zhang, Hsin-Chu, TW;
Yi-chen Huang, Hsin-Chu, TW;
Che-Cheng Chang, New Taipei, TW;
Po-Chi Wu, Zhubei, TW;
Chang-Yin Chen, Taipei, TW;
Zhe-Hao Zhang, Hsin-Chu, TW;
Yi-Chen Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming a gate stack over a semiconductor substrate, wherein the gate stack includes a gate dielectric and a gate electrode over the gate dielectric. A portion of the semiconductor substrate adjacent to the gate stack is recessed to form a recess. A semiconductor region is epitaxially grown in the recess. The semiconductor region is implanted with a p-type impurity or an n-type impurity. A dry treatment is performed on the semiconductor region.