The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2014

Filed:

Dec. 27, 2007
Applicants:

Ikuo Sawada, Nirasaki, JP;

Peter Ventzek, Nirasaki, JP;

Tatsuro Ohshita, Nirasaki, JP;

Kazuyoshi Matsuzaki, Nirasaki, JP;

Songyun Kang, Amagasaki, JP;

Inventors:

Ikuo Sawada, Nirasaki, JP;

Peter Ventzek, Nirasaki, JP;

Tatsuro Ohshita, Nirasaki, JP;

Kazuyoshi Matsuzaki, Nirasaki, JP;

Songyun Kang, Amagasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.


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