The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Oct. 02, 2007
Applicants:

Sergey Savastiouk, San Jose, CA (US);

Valentin Kosenko, Palo Alto, CA (US);

James J. Roman, Sunnyvale, CA (US);

Inventors:

Sergey Savastiouk, San Jose, CA (US);

Valentin Kosenko, Palo Alto, CA (US);

James J. Roman, Sunnyvale, CA (US);

Assignee:

Invensas Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A portion of a conductive layer () provides a capacitor electrode (). Dielectric trenches () are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the electrode but insulated from the electrode. Capacitor dielectric () can be formed by anodizing tantalum while a nickel layer () protects an underlying copper () from the anodizing solution. This protection allows the tantalum layer to be made thin to obtain large capacitance. Chemical mechanical polishing of a layer () is made faster, and hence possibly less expensive, by first patterning the layer photolithographically to form, and/or increase in height, upward protrusions of this layer.


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