The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Oct. 06, 2011
Chieh-te Chen, Kaohsiung, TW;
Shih-fang Tzou, Hsinchu, TW;
Jiunn-hsiung Liao, Tainan, TW;
Yi-po Lin, Tainan, TW;
Chieh-Te Chen, Kaohsiung, TW;
Shih-Fang Tzou, Hsinchu, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Yi-Po Lin, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device comprises a metal gate electrode, a passive device and a hard mask layer. The passive device has a poly-silicon element layer. The hard mask layer is disposed on the metal gate electrode and the passive electrode and has a first opening and a second opening substantially coplanar with each other, wherein the metal gate electrode and the poly-silicon element layer are respectively exposed via the first opening and the second opening; and there is a distance between the first opening and the metal gate electrode substantially less than the distance between the second opening and the poly-silicon element layer.