The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Dec. 16, 2010
Jingmei Liang, San Jose, CA (US);
Xiaolin Chen, San Ramon, CA (US);
Matthew L. Miller, Newark, CA (US);
Nitin K. Ingle, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Jingmei Liang, San Jose, CA (US);
Xiaolin Chen, San Ramon, CA (US);
Matthew L. Miller, Newark, CA (US);
Nitin K. Ingle, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H) and nitrogen (N) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.