The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Mar. 24, 2010
Harry Sewell, Ridgefield, CT (US);
Mircea Dusa, Wezembeek-Oppem, BE;
Richard Johannes Franciscus Van Haren, Waalre, NL;
Manfred Gawein Tenner, Eindhoven, NL;
Maya Angelova Doytcheva, Eindhoven, NL;
Harry Sewell, Ridgefield, CT (US);
Mircea Dusa, Wezembeek-Oppem, BE;
Richard Johannes Franciscus Van Haren, Waalre, NL;
Manfred Gawein Tenner, Eindhoven, NL;
Maya Angelova Doytcheva, Eindhoven, NL;
ASML Holding N.V., Veldhoven, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.