The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Apr. 12, 2012
John Ross Jameson, Burlingame, CA (US);
Antonio R. Gallo, San Mateo, CA (US);
Foroozan Sarah Koushan, San Jose, CA (US);
Michael A. Van Buskirk, Saratoga, CA (US);
John Ross Jameson, Burlingame, CA (US);
Antonio R. Gallo, San Mateo, CA (US);
Foroozan Sarah Koushan, San Jose, CA (US);
Michael A. Van Buskirk, Saratoga, CA (US);
Adesto Technologies Corporation, Sunnyvale, CA (US);
Abstract
A memory device can include at least one cathode formed in first opening of a first insulating layer; at least one anode formed in a second opening of second insulating layer, the second insulating layer being a different vertical layer than the first insulating layer; and a memory layer comprising an ion conductor layer extending laterally between the at least one anode and cathode on the first insulating layer, the ion conductor layer having a thickness in the vertical direction less than a depth of the first opening.