The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Mar. 10, 2010
Han-pin Chung, Fongshan, TW;
Bor Chiuan Hsieh, Taoyuan, TW;
Shiang-bau Wang, Pingzchen, TW;
Ming-jie Huang, Hsinchu, TW;
Han-Pin Chung, Fongshan, TW;
Bor Chiuan Hsieh, Taoyuan, TW;
Shiang-Bau Wang, Pingzchen, TW;
Ming-Jie Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device that includes forming first and second gate structures over first and second regions of a substrate, respectively, forming spacers on sidewalls of the first and second gate structures, the spacers being formed of a first material, forming a capping layer over the first and second gate structures, the capping layer being formed of a second material different from the first material, forming a protection layer over the second region to protect the second gate structure, removing the capping layer over the first gate structure; removing the protection layer over the second region, epitaxially (epi) growing a semiconductor material on exposed portions of the substrate in the first region, and removing the capping layer over the second gate structure by an etching process that exhibits an etching selectivity of the second material to the first material.