The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Sep. 14, 2012
Marie Angelopoulos, Cortlandt Manor, NY (US);
Katherina E. Babich, Chappaqua, NY (US);
Sean D. Burns, Hopewell Junction, NY (US);
Allen H. Gabor, Katonah, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
Arpan P. Mahorowala, Bronxville, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
Marie Angelopoulos, Cortlandt Manor, NY (US);
Katherina E. Babich, Chappaqua, NY (US);
Sean D. Burns, Hopewell Junction, NY (US);
Allen H. Gabor, Katonah, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
Arpan P. Mahorowala, Bronxville, NY (US);
Dirk Pfeiffer, Dobbs Ferry, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiObackbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.