The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2013

Filed:

Jun. 23, 2011
Applicants:

Nobuhiro Wada, Nirasaki, JP;

Makoto Kobayashi, Hsinchu, TW;

Hiroshi Tsujimoto, Nirasaki, JP;

Jun Tamura, Nirasaki, JP;

Mamoru Naoi, Nirasaki, JP;

Jun Oyabu, Nirasaki, JP;

Inventors:

Nobuhiro Wada, Nirasaki, JP;

Makoto Kobayashi, Hsinchu, TW;

Hiroshi Tsujimoto, Nirasaki, JP;

Jun Tamura, Nirasaki, JP;

Mamoru Naoi, Nirasaki, JP;

Jun Oyabu, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
Abstract

A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.


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