The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Apr. 06, 2010
Chien-hsin Huang, Taichung, TW;
Li-che Chen, Taipei, TW;
Ming-i Wang, Taipei, TW;
Bang-chiang Lan, Taipei, TW;
Tzung-han Tan, Taipei, TW;
Hui-min Wu, Hsinchu, TW;
Tzung-i Su, Yunlin, TW;
Chien-Hsin Huang, Taichung, TW;
Li-Che Chen, Taipei, TW;
Ming-I Wang, Taipei, TW;
Bang-Chiang Lan, Taipei, TW;
Tzung-Han Tan, Taipei, TW;
Hui-Min Wu, Hsinchu, TW;
Tzung-I Su, Yunlin, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials.