The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Nov. 14, 2011
Laura Dinu-gürtler, Delft, NL;
Willem Henk Urbanus, Culemborg, NL;
Marco Jan-jaco Wieland, Delft, NL;
Stijn Willem Herman Karel Steenbrink, The Hague, NL;
Laura Dinu-Gürtler, Delft, NL;
Willem Henk Urbanus, Culemborg, NL;
Marco Jan-Jaco Wieland, Delft, NL;
Stijn Willem Herman Karel Steenbrink, The Hague, NL;
Mapper Lithography IP B.V., Delft, NL;
Abstract
A charged particle lithography system for transferring a pattern onto the surface of a target, comprising a main vacuum chamber, a source chamber and an intermediate chamber, both located in the main vacuum chamber, a beam generator for generating a charged particle beam, the beam generator located in the source chamber, and a first aperture array element for generating a plurality of charged particle beamlets from the beam, the first aperture array element located in the intermediate chamber. The system is adapted for maintaining a first pressure in the main vacuum chamber, a second pressure in the intermediate chamber, and a third pressure in the source chamber, and wherein the first pressure is lower than an ambient pressure, the second pressure is lower than the first pressure, and the third pressure is lower than the second pressure.