The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Dec. 15, 2011
Hyo-san Lee, Suwon-si, KR;
Chang-ki Hong, Sungnam-si, KR;
Kun-tack Lee, Sungnam-si, KR;
Woo-gwan Shim, Yongin-si, KR;
Jeong-nam Han, Seoul, KR;
Jung-min OH, Incheon, KR;
Kwon-taek Lim, Busan, KR;
Ha-soo Hwang, Busan, KR;
Haldorai Yuvaraj, Busan, KR;
Jae-mok Jung, Busan, KR;
Hyo-san Lee, Suwon-si, KR;
Chang-Ki Hong, Sungnam-si, KR;
Kun-Tack Lee, Sungnam-si, KR;
Woo-Gwan Shim, Yongin-si, KR;
Jeong-Nam Han, Seoul, KR;
Jung-Min Oh, Incheon, KR;
Kwon-Taek Lim, Busan, KR;
Ha-Soo Hwang, Busan, KR;
Haldorai Yuvaraj, Busan, KR;
Jae-Mok Jung, Busan, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.