The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Nov. 19, 2009
Kanji Yasui, Niigata, JP;
Hiroshi Nishiyama, Niigata, JP;
Yasunobu Inoue, Niigata, JP;
Mitsuru Ushijima, Tokyo, JP;
Katsuhiko Iwabuchi, Kanagawa, JP;
Kanji Yasui, Niigata, JP;
Hiroshi Nishiyama, Niigata, JP;
Yasunobu Inoue, Niigata, JP;
Mitsuru Ushijima, Tokyo, JP;
Katsuhiko Iwabuchi, Kanagawa, JP;
National University Corporation Nagaoka University of Technology, Niigata, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A substrate processing method includes steps of: arranging a substrate in a chamber; introducing Hgas at a first flow rate and Ogas at a second flow rate independently from the Hgas into a catalyst reaction portion in which catalyst is accommodated, wherein HO gas produced from the Hgas and the Ogas that contact the catalyst is ejected from the catalyst reaction portion toward the substrate; and reducing a flow rate of the Ogas introduced to the catalyst reaction portion to a third flow rate that is lower than the second flow rate, wherein the steps of introducing the Hgas and the Ogas and reducing the flow rate of the Ogas are repeated in this order at a predetermined repetition frequency, thereby processing the substrate.