The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Feb. 26, 2009
Tadahiro Ohmi, Sendai, JP;
Masaki Hirayama, Sendai, JP;
Tetsuya Goto, Sendai, JP;
Yasuyuki Shirai, Sendai, JP;
Masafumi Kitano, Sendai, JP;
Kohei Watanuki, Sendai, JP;
Takaaki Matsuoka, Tokyo, JP;
Shigemi Murakawa, Chiba, JP;
Tadahiro Ohmi, Sendai, JP;
Masaki Hirayama, Sendai, JP;
Tetsuya Goto, Sendai, JP;
Yasuyuki Shirai, Sendai, JP;
Masafumi Kitano, Sendai, JP;
Kohei Watanuki, Sendai, JP;
Takaaki Matsuoka, Tokyo, JP;
Shigemi Murakawa, Chiba, JP;
Tokyo Electron Limited, , JP;
Tohoku University, , JP;
Abstract
A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiOcomposition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.