The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8569868 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 29, 2013

Filed:

Jul. 18, 2012
Applicants:

Kangguo Cheng, Albany, NY (US);

Bruce B. Doris, Albany, NY (US);

Steven J. Holmes, Hopewell Junction, VT (US);

Xuefeng Hua, Guilderland, NY (US);

Ying Zhang, Yorktown Heights, NY (US);

Inventors:

Kangguo Cheng, Albany, NY (US);

Bruce B. Doris, Albany, NY (US);

Steven J. Holmes, Hopewell Junction, VT (US);

Xuefeng Hua, Guilderland, NY (US);

Ying Zhang, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure for a semiconductor device is disclosed. The structure includes a first feature and a second feature. The first feature and the second feature are formed simultaneously in a single etch process from a same monolithic substrate layer and are integrally and continuously connected to each other. The first feature has a width dimension of less than a minimum feature size achievable by lithography and the second feature has a width dimension of at least equal to a minimum feature size achievable by lithography.


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