The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8569173 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 29, 2013

Filed:

Dec. 08, 2011
Applicants:

Liang LI, Singapore, SG;

Huang Liu, Singapore, SG;

Alex See, Singapore, SG;

Soh Yun Siah, Singapore, SG;

Xue Song Rao, Singapore, SG;

Peng Zhou, Singapore, SG;

Inventors:

Liang Li, Singapore, SG;

Huang Liu, Singapore, SG;

Alex See, Singapore, SG;

Soh Yun Siah, Singapore, SG;

Xue Song Rao, Singapore, SG;

Peng Zhou, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein are various methods of protecting elevated polysilicon structures during etching processes. In one example, the method includes forming a layer stack above a semiconducting substrate for a memory device, forming a protective mask layer above the layer stack of the memory device and performing at least one etching process to define a gate electrode for a transistor while the protective mask is in position above the layer stack for the memory device.


Find Patent Forward Citations

Li, Liang. (2013). Methods of protecting elevated polysilicon structures during etching processes (U.S. Patent No. 8569173). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8569173

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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