The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
May. 16, 2012
Lance Scudder, Sunnyvale, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Charles Stager, Austin, TX (US);
Urupattur C. Sridharan, San Jose, CA (US);
Dalong Zhao, San Jose, CA (US);
Lance Scudder, Sunnyvale, CA (US);
Pushkar Ranade, Los Gatos, CA (US);
Charles Stager, Austin, TX (US);
Urupattur C. Sridharan, San Jose, CA (US);
Dalong Zhao, San Jose, CA (US);
SuVolta, Inc., Los Gatos, CA (US);
Abstract
A method for fabricating field effect transistors using carbon doped silicon layers to substantially reduce the diffusion of a doped screen layer formed below a substantially undoped channel layer includes forming an in-situ epitaxial carbon doped silicon substrate that is doped to form the screen layer in the carbon doped silicon substrate and forming the substantially undoped silicon layer above the carbon doped silicon substrate. The method may include implanting carbon below the screen layer and forming a thin layer of in-situ epitaxial carbon doped silicon above the screen layer. The screen layer may be formed either in a silicon substrate layer or the carbon doped silicon substrate.