The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2013

Filed:

Mar. 16, 2012
Applicants:

Hoon Kim, Suwon-si, KR;

Young-su Sung, Chuncheon-si, KR;

Young-kuen Kim, Seoul, KR;

Dong-seok Nam, Yongin-si, KR;

Inventors:

Hoon Kim, Suwon-si, KR;

Young-Su Sung, Chuncheon-si, KR;

Young-Kuen Kim, Seoul, KR;

Dong-Seok Nam, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); G03F 1/24 (2012.01);
U.S. Cl.
CPC ...
Abstract

A reflective EUV mask and a method of manufacturing the same, the reflective EUV mask including a mask substrate having an exposing region and a peripheral region, the mask substrate including a light scattering crystalline portion that scatters light incident to the peripheral region and that decreases reflectivity of the peripheral region; a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening that exposes the crystalline portion; and an absorbing layer pattern on an upper surface of the reflective layer, the absorbing layer pattern having a second opening in fluidic communication with the first opening.


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