The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Feb. 27, 2012
Koichi Tachibana, Kanagawa-ken, JP;
Hisashi Yoshida, Kanagawa-ken, JP;
Hiroshi Ono, Tokyo, JP;
Hajime Nago, Kanagawa-ken, JP;
Yoshiyuki Harada, Tokyo, JP;
Toshiki Hikosaka, Kanagawa-ken, JP;
Maki Sugai, Kanagawa-ken, JP;
Toshiyuki Oka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Koichi Tachibana, Kanagawa-ken, JP;
Hisashi Yoshida, Kanagawa-ken, JP;
Hiroshi Ono, Tokyo, JP;
Hajime Nago, Kanagawa-ken, JP;
Yoshiyuki Harada, Tokyo, JP;
Toshiki Hikosaka, Kanagawa-ken, JP;
Maki Sugai, Kanagawa-ken, JP;
Toshiyuki Oka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.