The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Jun. 07, 2010
Applicants:
Chun-fai Cheng, Hsinchu, TW;
Hsueh-chang Sung, Zhubei, TW;
Kuan-yu Chen, Taipei, TW;
Hsien-hsin Lin, Hsinchu, TW;
Fung Ka Hing, Hsinchu, TW;
Inventors:
Chun-Fai Cheng, Hsinchu, TW;
Hsueh-Chang Sung, Zhubei, TW;
Kuan-Yu Chen, Taipei, TW;
Hsien-Hsin Lin, Hsinchu, TW;
Fung Ka Hing, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor includes a gate electrode disposed over a substrate. At least one composite strain structure is disposed adjacent to a channel below the gate electrode. The at least one composite strain structure includes a first strain region within the substrate. A second strain region is disposed over the first strain region. At least a portion of the second strain region is disposed within the substrate.