The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2013

Filed:

Mar. 07, 2012
Applicants:

Alok Ranjan, Slingerlands, NY (US);

Kaushik Arun Kumar, Poughkeepsie, NY (US);

Inventors:

Alok Ranjan, Slingerlands, NY (US);

Kaushik Arun Kumar, Poughkeepsie, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for method for removing a hard mask is described. The method includes forming at least a portion of a trench-via structure in a low-k insulation layer on a substrate using one or more etching processes and a hard mask layer overlying the low-k insulation layer. Thereafter, the method includes depositing a SiOCl-containing layer on exposed surfaces of the trench-via structure to form an insulation protection layer, performing one or more etching processes to anisotropically remove at least a portion of the SiOCl-containing layer from at least one surface on the trench-via structure, and removing the hard mask layer using a mask removal etching process.


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