The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Aug. 18, 2011
Masahito Mori, Tokorozawa, JP;
Naoyuki Kofuji, Tama, JP;
Naoshi Itabashi, Hachioji, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrodeplaced within a processing chamber of the vacuum reactor and having a waferto be etched mounted on the upper surface thereof, bias supplying unitsandfor supplying high frequency power for forming a bias potential to the lower electrode, a gas supply meansfor feeding reactive gas into the processing chamber, an electric field supplying meansthroughfor supplying a magnetic field for generating plasma in the processing chamber, and a control unitfor controlling the distribution of ion energy in the plasma being incident on the wafervia the high frequency power.