The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Sep. 21, 2010
Takashi Whitney Orimoto, Sunnyvale, CA (US);
Atsushi Suyama, Naoya, JP;
Ming Tian, Yokkaichi, JP;
Henry Chin, Santa Clara, CA (US);
Henry Chien, San Jose, CA (US);
Vinod Robert Purayath, Santa Clara, CA (US);
Dana Lee, Saratoga, CA (US);
Takashi Whitney Orimoto, Sunnyvale, CA (US);
Atsushi Suyama, Naoya, JP;
Ming Tian, Yokkaichi, JP;
Henry Chin, Santa Clara, CA (US);
Henry Chien, San Jose, CA (US);
Vinod Robert Purayath, Santa Clara, CA (US);
Dana Lee, Saratoga, CA (US);
SanDisk Technologies Inc., Plano, TX (US);
Abstract
Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.