The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Oct. 03, 2011
Christopher B. D'aleo, Armenia, NY (US);
Gregory M. Johnson, Hopewell Junction, NY (US);
Muthukumarasamy Karthikeyan, Fishkill, NY (US);
Shenzhi Yang, Yorktown Heights, NY (US);
Balasingham Bahierathan, Fishkill, NY (US);
Christopher B. D'Aleo, Armenia, NY (US);
Gregory M. Johnson, Hopewell Junction, NY (US);
Muthukumarasamy Karthikeyan, Fishkill, NY (US);
Shenzhi Yang, Yorktown Heights, NY (US);
Balasingham Bahierathan, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
STMicroelectronics, Inc., Coppell, TX (US);
Abstract
Method form via chain and serpentine/comb test structures in kerf areas of a wafer. The via chain test structures comprise a first via chain and a second via chain in a first kerf area. The via chain test structures are formed such that geometrically shaped portions of the first via chain and geometrically shaped portions of the second via chain alternate along the length of the first kerf area. The methods perform relatively low (first) magnification testing to identify a defective geometrically shaped portion that contains a defective via structure. The methods then perform relatively high (second) magnification testing only within the defective geometrically shaped portion. The first magnification testing is performed at a lower magnification relative to the second magnification testing.