The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Sep. 30, 2011
Martin Jay Seamons, San Jose, CA (US);
Sudha Rathi, San Jose, CA (US);
Kwangduk Douglas Lee, Redwood City, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Chiu Chan, Foster City, CA (US);
Martin Jay Seamons, San Jose, CA (US);
Sudha Rathi, San Jose, CA (US);
Kwangduk Douglas Lee, Redwood City, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Chiu Chan, Foster City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.