The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
May. 09, 2012
Brent A. Anderson, Jericho, VT (US);
Andres Bryant, Burlington, VT (US);
Josephine B. Chang, Mahopac, NY (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Ryoji Hasumi, Crompond, NY (US);
Edward J. Nowak, Essex Junction, VT (US);
Mickey H. Yu, Essex Jucntion, VT (US);
Brent A. Anderson, Jericho, VT (US);
Andres Bryant, Burlington, VT (US);
Josephine B. Chang, Mahopac, NY (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Ryoji Hasumi, Crompond, NY (US);
Edward J. Nowak, Essex Junction, VT (US);
Mickey H. Yu, Essex Jucntion, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Toshiba America Electronic Components, Inc., Irvine, CA (US);
Abstract
A low power maskless inter-well deep trench isolation structure and methods of manufacture such structure are provided. A method includes depositing a plurality of layers over a substrate, and forming a layer over the plurality of layers. The method also includes forming well structures in the substrate, and forming sidewall spacers at opposing sides of the layer. The method further includes forming a self-aligned deep trench in the substrate to below the well structures, by removing the sidewall spacers and portions of the substrate aligned with an opening formed by the removal of the sidewall spacers. The method also includes forming a shallow trench in alignment with the deep trench. The method further includes forming shallow trench isolation structures and deep trench isolation structures by filling the shallow trench and the deep trench with insulator material.