The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Jan. 08, 2010
Yasuhito Narushima, Nagasaki, JP;
Toshimichi Kubota, Nagasaki, JP;
Shinichi Kawazoe, Nagasaki, JP;
Fukuo Ogawa, Nagasaki, JP;
Tomohiro Fukuda, Nagasaki, JP;
Yasuhito Narushima, Nagasaki, JP;
Toshimichi Kubota, Nagasaki, JP;
Shinichi Kawazoe, Nagasaki, JP;
Fukuo Ogawa, Nagasaki, JP;
Tomohiro Fukuda, Nagasaki, JP;
Sumco Techxiv Corporation, Nagasaki, JP;
Abstract
To provide a manufacturing method for a silicon single crystal that can reduce introduction of dislocation thereinto even if a required amount of dopant is added to a melt while growing a straight body portion of a silicon ingot. In a manufacturing method for a silicon single crystal according to the present invention that includes a dopant addition step of adding a dopant to a melt while a straight body portion of a silicon single crystal is growing in a growth step of growing the silicon single crystal by dipping a seed crystal into a silicon melt and then pulling the seed crystal therefrom, in the dopant addition step, a remaining mass of the melt is calculated at the beginning thereof, and the dopant is added to the melt at a rate of 0.01 to 0.035 g/min·kg per minute per 1 kg of the calculated remaining mass of the melt.