The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Jan. 08, 2013
Yu-hung Cheng, Hsinchu, TW;
Jhi-cherng LU, Hsinchu, TW;
Ming-hua Yu, Jhubei, TW;
Chii-horng LI, Jhubei, TW;
Tze-liang Lee, Hsinchu, TW;
Yu-Hung Cheng, Hsinchu, TW;
Jhi-Cherng Lu, Hsinchu, TW;
Ming-Hua Yu, Jhubei, TW;
Chii-Horng Li, Jhubei, TW;
Tze-Liang Lee, Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device, the method including growing a first semiconductor structure comprising a first semiconductor material on a surface of a substrate, wherein growing the first semiconductor structure includes forming a semiconductor particle comprising the first semiconductor material on a second semiconductor structure of the semiconductor device. The method further includes forming a protection layer of a second semiconductor material on the first semiconductor structure, wherein forming the protection layer includes forming the protection layer on the semiconductor particle. The method further includes removing a portion of the protection layer, wherein removing the portion of the protection layer includes fully removing the protection layer on the semiconductor particle and the semiconductor particle.