The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Mar. 08, 2012
Zong-long Jhang, Hsinchu, TW;
Chia-ming Chang, Hsinchu, TW;
Hsiang-chih Hsiao, Hsinchu, TW;
Chun-yi Chiang, Hsinchu, TW;
Che-yung Lai, Hsinchu, TW;
Chou-huan Yu, Hsinchu, TW;
Ta-wen Liao, Hsinchu, TW;
Zong-Long Jhang, Hsinchu, TW;
Chia-Ming Chang, Hsinchu, TW;
Hsiang-Chih Hsiao, Hsinchu, TW;
Chun-Yi Chiang, Hsinchu, TW;
Che-Yung Lai, Hsinchu, TW;
Chou-Huan Yu, Hsinchu, TW;
Ta-Wen Liao, Hsinchu, TW;
AU Optronics Corp., Hsinchu, TW;
Abstract
A method is provided for fabricating source/drain electrodes of a thin film transistor. The method generally provides a substrate having a first gate electrode and a second gate electrode adjacent and electrically connected. The method further provides coating a photoresist layer on the metal layer, and performing an exposure process on the photoresist layer by a photomask. The method further performs a development process on the exposed photoresist layer to form a photoresist pattern layer with different thicknesses on the metal layer, and then etches the metal layer using the photoresist pattern layer as an etch mask, to form a pair of first source/drain electrodes on the first gate electrode and a pair of second source/drain electrodes on the second gate electrode.