The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Jan. 25, 2011
Leslie Charns, San Jose, CA (US);
John M. Cotte, New Fairfield, CT (US);
Jason E. Cummings, Smithfield, NC (US);
Lukasz J. Hupka, Cronton-On-Hudson, NY (US);
Dinesh R. Koli, Tarrytown, NY (US);
Tomohisa Konno, Mie, JP;
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
Michael F. Lofaro, Danbury, CT (US);
Jakub W. Nalaskowski, Yorktown Heights, NY (US);
Masahiro Noda, Mie, JP;
Dinesh K. Penigalapati, Tarrytown, NY (US);
Tatsuya Yamanaka, Mie, JP;
Leslie Charns, San Jose, CA (US);
John M. Cotte, New Fairfield, CT (US);
Jason E. Cummings, Smithfield, NC (US);
Lukasz J. Hupka, Cronton-On-Hudson, NY (US);
Dinesh R. Koli, Tarrytown, NY (US);
Tomohisa Konno, Mie, JP;
Mahadevaiyer Krishnan, Hopewell Junction, NY (US);
Michael F. Lofaro, Danbury, CT (US);
Jakub W. Nalaskowski, Yorktown Heights, NY (US);
Masahiro Noda, Mie, JP;
Dinesh K. Penigalapati, Tarrytown, NY (US);
Tatsuya Yamanaka, Mie, JP;
International Business Machines Corporation, Armonk, NY (US);
JSR Corporation, Tokyo, JP;
Abstract
Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer.