The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Jun. 26, 2009
Yih-ann Lin, Hsinchu County, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Donald Y. Chao, Hsinchu, TW;
Yi-shien Mor, Hsinchu, TW;
Kuo-tai Huang, Hsinchu, TW;
Yih-Ann Lin, Hsinchu County, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Donald Y. Chao, Hsinchu, TW;
Yi-Shien Mor, Hsinchu, TW;
Kuo-Tai Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate dielectric over a semiconductor substrate, forming a capping layer over or under the gate dielectric, forming a metal layer over the capping layer, the metal layer having a first work function, treating a portion of the metal layer such that a work function of the portion of the metal layer changes from the first work function to a second work function, and forming a first metal gate from the untreated portion of the metal layer having the first work function and forming a second metal gate from the treated portion of the metal layer having the second work function.