The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Jul. 14, 2011
Vincent Ho, Singapore, SG;
Wenhe Lin, Singapore, SG;
Young Way Teh, Singapore, SG;
Yong Kong Siew, Selangor, MY;
Bei Chao Zhang, Singapore, SG;
Fan Zhang, Singapore, SG;
Haifeng Sheng, Singapore, SG;
Juan Boon Tan, Singapore, SG;
Vincent Ho, Singapore, SG;
Wenhe Lin, Singapore, SG;
Young Way Teh, Singapore, SG;
Yong Kong Siew, Selangor, MY;
Bei Chao Zhang, Singapore, SG;
Fan Zhang, Singapore, SG;
Haifeng Sheng, Singapore, SG;
Juan Boon Tan, Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.