The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2013

Filed:

Sep. 21, 2011
Applicants:

Hitoshi Hoshino, Ota-ku, JP;

Hiroumi Ueno, Ota-ku, JP;

Yuji Nitta, Ota-ku, JP;

Takashi Okamura, Ota-ku, JP;

Inventors:

Hitoshi Hoshino, Ota-ku, JP;

Hiroumi Ueno, Ota-ku, JP;

Yuji Nitta, Ota-ku, JP;

Takashi Okamura, Ota-ku, JP;

Assignee:

Disco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A sapphire wafer dividing method including a cut groove forming step of forming a plurality of cut grooves on the back side of a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, a modified layer forming step of forming a plurality of modified layers inside the sapphire wafer along the division lines, and a dividing step of dividing the sapphire wafer into individual light emitting devices along the modified layers as a division start point, thereby chamfering the corners of the back side of each light emitting device owing to the formation of the cut grooves in the cut groove forming step.


Find Patent Forward Citations

Hoshino, Hitoshi. (2013). Sapphire wafer dividing method (U.S. Patent No. 8518730). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8518730

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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