The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2013

Filed:

Jun. 26, 2012
Applicants:

Jun YE, Palo Alto, CA (US);

Yen-wen LU, Los Altos, CA (US);

Yu Cao, Saratoga, CA (US);

Luoqi Chen, Saratoga, CA (US);

Xun Chen, Palo Alto, CA (US);

Inventors:

Jun Ye, Palo Alto, CA (US);

Yen-Wen Lu, Los Altos, CA (US);

Yu Cao, Saratoga, CA (US);

Luoqi Chen, Saratoga, CA (US);

Xun Chen, Palo Alto, CA (US);

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G06F 19/00 (2006.01); G21K 5/00 (2006.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
G06F 17/5081 (2013.01); G06F 19/00 (2013.01); G21K 5/00 (2013.01); G03F 1/00 (2013.01);
Abstract

In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.


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