The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jun. 25, 2008
Wei Liu, San Jose, CA (US);
Eiichi Matsusue, Yokohama, JP;
Meihua Shen, Fremont, CA (US);
Shashank Deshmukh, San Jose, CA (US);
Anh-kiet Quang Phan, San Jose, CA (US);
David Palagashvili, Mountain View, CA (US);
Michael D. Willwerth, Campbell, CA (US);
Jong I. Shin, Santa Clara, CA (US);
Barrett Finch, San Jose, CA (US);
Yohei Kawase, Chiba, JP;
Wei Liu, San Jose, CA (US);
Eiichi Matsusue, Yokohama, JP;
Meihua Shen, Fremont, CA (US);
Shashank Deshmukh, San Jose, CA (US);
Anh-Kiet Quang Phan, San Jose, CA (US);
David Palagashvili, Mountain View, CA (US);
Michael D. Willwerth, Campbell, CA (US);
Jong I. Shin, Santa Clara, CA (US);
Barrett Finch, San Jose, CA (US);
Yohei Kawase, Chiba, JP;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.