The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Mar. 23, 2010
Applicants:
Yunsang Kim, Monte Sereno, CA (US);
Andrew Bailey, Iii, Pleasanton, CA (US);
Jack Chen, Fremont, CA (US);
Inventors:
Yunsang Kim, Monte Sereno, CA (US);
Andrew Bailey, III, Pleasanton, CA (US);
Jack Chen, Fremont, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO, CO, CH, H, NH, CHFand a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.