The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2013
Filed:
Mar. 01, 2010
Guangming Xiao, Austin, TX (US);
Thomas C. Cecil, Menlo Park, CA (US);
Linyong Pang, Los Gatos, CA (US);
Robert E. Gleason, San Carlos, CA (US);
John F. Mccarty, Redwood City, CA (US);
Guangming Xiao, Austin, TX (US);
Thomas C. Cecil, Menlo Park, CA (US);
Linyong Pang, Los Gatos, CA (US);
Robert E. Gleason, San Carlos, CA (US);
John F. McCarty, Redwood City, CA (US);
Synopsys, Inc., Mountain View, CA (US);
Abstract
A technique for determining a full-field Mask Error Enhancement Function (MEEF) associated with a mask pattern for use in a photo-lithographic process is described. In this technique, simulated wafer patterns corresponding to the mask pattern are generated at an image plane in an optical path associated with the photo-lithographic process. Then, the full-field MEEF is determined. This full-field MEEF includes MEEF values in multiple directions at positions along one or more contours that define boundaries of one or more features in the one or more simulated wafer patterns. Moreover, at least one of the MEEF values is at a position on a contour where a critical dimension for a feature associated with the contour is undefined.