The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Jul. 14, 2011
Lie-yong Yang, Hsin-Chu, TW;
Feng-ming Chang, Chia-Yi, TW;
Chang-ta Yang, Hsin-Chu, TW;
Ping-wei Wang, Hsin-Chu, TW;
Lie-Yong Yang, Hsin-Chu, TW;
Feng-Ming Chang, Chia-Yi, TW;
Chang-Ta Yang, Hsin-Chu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment is a method for forming a static random access memory (SRAM) cell. The method comprises forming transistors on a semiconductor substrate and forming a first linear intra-cell connection and a second linear intra-cell connection. Longitudinal axes of the active areas of the transistors are parallel. A first pull-down transistor and a first pull-up transistor share a first common gate structure, and a second pull-down transistor and a second pull-up transistor share a second common gate structure. The first linear intra-cell connection electrically couples active areas of the first pull-down transistor and the first pull-up transistor to the second common gate structure. The second linear intra-cell connection electrically couples active areas of the second pull-down transistor and the second pull-up transistor to the first common gate structure.