The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Jun. 23, 2011
Paul S Andry, Yorktown Heights, NY (US);
Mukta G Farooq, Hopewell Junction, NY (US);
Robert Hannon, Wappingers Falls, NY (US);
Subramanian S Iyer, Mount Kisco, NY (US);
Emily R Kinser, Poughkeepsie, NY (US);
Cornelia K Tsang, Mohegan Lake, NY (US);
Richard P Volant, New Fairfield, CT (US);
Paul S Andry, Yorktown Heights, NY (US);
Mukta G Farooq, Hopewell Junction, NY (US);
Robert Hannon, Wappingers Falls, NY (US);
Subramanian S Iyer, Mount Kisco, NY (US);
Emily R Kinser, Poughkeepsie, NY (US);
Cornelia K Tsang, Mohegan Lake, NY (US);
Richard P Volant, New Fairfield, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.