The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Feb. 11, 2011
Hong-chen Cheng, Hsinchu, TW;
Ming-yi Lee, Zhudong Township, TW;
Kuo-hua Pan, Hsinchu, TW;
Jung-hsuan Chen, Hsinchu, TW;
Li-chun Tien, Tainan, TW;
Cheng Hung Lee, Hsinchu, TW;
Hung-jen Liao, Hsinchu, TW;
Hong-Chen Cheng, Hsinchu, TW;
Ming-Yi Lee, Zhudong Township, TW;
Kuo-Hua Pan, Hsinchu, TW;
Jung-Hsuan Chen, Hsinchu, TW;
Li-Chun Tien, Tainan, TW;
Cheng Hung Lee, Hsinchu, TW;
Hung-Jen Liao, Hsinchu, TW;
Abstract
A circuit comprises a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, and a fourth NMOS transistor. The PMOS transistors and the NMOS transistors are configured to provide a first voltage reference node having a first reference voltage and a second voltage reference node having a second reference voltage. The first reference voltage and the second reference voltage serve as a first reference voltage and a second reference voltage for a memory cell, respectively.