The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Oct. 17, 2011
Chan-lon Yang, Taipei, TW;
Ted Ming-lang Guo, Tainan, TW;
Chin-i Liao, Tainan, TW;
Chin-cheng Chien, Tainan, TW;
Shu-yen Chan, Changhua County, TW;
Chun-yuan Wu, Yun-Lin County, TW;
Chan-Lon Yang, Taipei, TW;
Ted Ming-Lang Guo, Tainan, TW;
Chin-I Liao, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
Shu-Yen Chan, Changhua County, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a strained channel semiconductor structure includes providing a substrate, forming at least one gate structure on said substrate, performing an etching process to form two recesses in said substrate at opposites sides of said gate structure, the sidewall of said recess being concaved in the direction to said gate structure and forming an included angle with respect to horizontal plane, and performing a pre-bake process to modify the recess such that said included angle between the sidewall of said recess and the horizontal plane is increased.