The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Aug. 27, 2012
Liang-gi Yao, Shinchu, TW;
Chun-hu Cheng, Hsinchu, TW;
Chen-yi Lee, Keelung, TW;
Jeff J. Xu, Jhubei, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Liang-Gi Yao, Shinchu, TW;
Chun-Hu Cheng, Hsinchu, TW;
Chen-Yi Lee, Keelung, TW;
Jeff J. Xu, Jhubei, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Abstract
This description relates to a method including forming an interfacial layer over a semiconductor substrate. The method further includes etching back the interfacial layer. The method further includes performing an ultraviolet (UV) curing process on the interfacial layer. The UV curing process includes supplying a gas flow rate ranging from 10 standard cubic centimeters per minute (sccm) to 5 standard liters per minute (slm), wherein the gas comprises inert gas, and heating the interfacial layer at a temperature less than or equal to 700° C. The method further includes depositing a high-k dielectric material over the interfacial layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile