The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Nov. 16, 2010
Anthony Renau, West Newbury, MA (US);
Ludovic Godet, Boston, MA (US);
Timothy J. Miller, Ipswich, MA (US);
Joseph C. Olson, Beverly, MA (US);
Vikram Singh, North Andover, MA (US);
James Buonodono, Amesbury, MA (US);
Deepak A. Ramappa, Cambridge, MA (US);
Russell J. Low, Rowley, MA (US);
Atul Gupta, Beverly, MA (US);
Kevin M. Daniels, Lynnfield, MA (US);
Anthony Renau, West Newbury, MA (US);
Ludovic Godet, Boston, MA (US);
Timothy J. Miller, Ipswich, MA (US);
Joseph C. Olson, Beverly, MA (US);
Vikram Singh, North Andover, MA (US);
James Buonodono, Amesbury, MA (US);
Deepak A. Ramappa, Cambridge, MA (US);
Russell J. Low, Rowley, MA (US);
Atul Gupta, Beverly, MA (US);
Kevin M. Daniels, Lynnfield, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.