The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2013

Filed:

Apr. 19, 2012
Applicants:

Seiji Harada, Ota-Ku, JP;

Yoshikazu Kobayashi, Ota-Ku, JP;

Inventors:

Seiji Harada, Ota-Ku, JP;

Yoshikazu Kobayashi, Ota-Ku, JP;

Assignee:

Disco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a device processing method, a laser beam is applied to a wafer along division lines from the back side of the wafer, thereby forming a division start point inside the wafer along the division lines at a depth not reaching the finished thickness of each device. A protective member is attached to the front side of the wafer before or after performing the division start points are formed. An external force is applied through the protective member to the wafer, thereby dividing the wafer along the division lines to obtain the individual devices. The back side of the wafer is ground to remove the modified layers, and a silicon nitride film is formed on at least the side surface of each device. The silicon nitride film has a gettering effect and is formed on the side surface of each device, which surface is formed by a cleavage plane.


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