The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Aug. 05, 2009
Dong Xu, Nashua, NH (US);
Xiaoping S. Yang, Nashua, NH (US);
Wendell Kong, Hollis, NH (US);
Lee M. Mohnkern, Bedford, NH (US);
Phillip M. Smith, Hollis, NH (US);
Pane-chane Chao, Nashua, NH (US);
Dong Xu, Nashua, NH (US);
Xiaoping S. Yang, Nashua, NH (US);
Wendell Kong, Hollis, NH (US);
Lee M. Mohnkern, Bedford, NH (US);
Phillip M. Smith, Hollis, NH (US);
Pane-chane Chao, Nashua, NH (US);
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Abstract
A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.