Company Filing History:
Years Active: 2011-2015
Title: The Innovations of Wendell Kong
Introduction
Wendell Kong is a notable inventor based in Hollis, NH (US). He has made significant contributions to the field of high-power and high-gain ultra-short gate HEMT devices. With a total of 3 patents to his name, his work showcases a commitment to advancing technology in electronic systems.
Latest Patents
One of Wendell Kong's latest patents is for an asymmetrically recessed high-power and high-gain ultra-short gate HEMT device. This innovative device features exceptional gain and a remarkably high breakdown voltage. The design incorporates an increased width asymmetric recess for the gate electrode, a composite channel layer with a thin indium arsenide layer embedded in the indium gallium arsenide channel layer, and double doping through an additional silicon doping spike. The improved transistor achieves an impressive 14 dB gain at 110 GHz and demonstrates a high breakdown voltage of 3.5-4 V. This advancement provides high gain, high power, and ultra-high frequency capabilities in an ultra-short gate device.
Career Highlights
Wendell Kong is currently employed at BAE Systems Information and Electronic Systems Integration Inc. His work at this esteemed company has allowed him to focus on cutting-edge technologies that push the boundaries of electronic systems.
Collaborations
Throughout his career, Wendell has collaborated with talented individuals such as Dong Xu and Pane-Chane Chao. These partnerships have contributed to the success of his projects and innovations.
Conclusion
Wendell Kong's contributions to the field of high-power and high-gain ultra-short gate HEMT devices highlight his expertise and dedication to innovation. His patents reflect a significant advancement in technology that will impact the future of electronic systems.