Company Filing History:
Years Active: 2013-2015
Title: The Innovations of Xiaoping S Yang
Introduction
Xiaoping S Yang is a notable inventor based in Nashua, NH (US). She has made significant contributions to the field of high-power and high-gain ultra-short gate HEMT devices. With a total of 2 patents to her name, her work has garnered attention for its innovative approach and technical advancements.
Latest Patents
One of her latest patents is focused on an asymmetrically recessed high-power and high-gain ultra-short gate HEMT device. This device boasts exceptional gain and a remarkably high breakdown voltage. The innovation is achieved through an increased width asymmetric recess for the gate electrode, a composite channel layer that includes a thin indium arsenide layer embedded in the indium gallium arsenide channel layer, and double doping facilitated by an additional silicon doping spike. The improved transistor demonstrates an impressive 14 dB gain at 110 GHz and exhibits a high breakdown voltage of 3.5-4 V. This advancement provides high gain, high power, and ultra-high frequency capabilities in an ultra-short gate device.
Career Highlights
Xiaoping S Yang is currently employed at BAE Systems Information and Electronic Systems Integration Inc. Her work at this esteemed company has allowed her to push the boundaries of technology in her field.
Collaborations
Throughout her career, she has collaborated with notable coworkers, including Dong Xu and Wendell Kong. These partnerships have contributed to her innovative projects and advancements in technology.
Conclusion
Xiaoping S Yang's contributions to the field of high-power and high-gain ultra-short gate HEMT devices highlight her expertise and innovative spirit. Her patents reflect a commitment to advancing technology and improving device performance.