Company Filing History:
Years Active: 2013-2015
Title: Innovations of Lee M Mohnkern
Introduction
Lee M Mohnkern is an accomplished inventor based in Bedford, NH (US). He has made significant contributions to the field of high-power and high-gain ultra-short gate HEMT devices. With a total of 2 patents, Mohnkern's work showcases his expertise and innovative spirit.
Latest Patents
Mohnkern's latest patents include the development of an asymmetrically recessed high-power and high-gain ultra-short gate HEMT device. This device features exceptional gain and a remarkably high breakdown voltage. The innovation is achieved through an increased width asymmetric recess for the gate electrode, a composite channel layer that includes a thin indium arsenide layer embedded in the indium gallium arsenide channel layer, and double doping facilitated by an additional silicon doping spike. The improved transistor demonstrates an impressive 14 dB gain at 110 GHz and exhibits a high breakdown voltage of 3.5-4 V. This advancement provides high gain, high power, and ultra-high frequency capabilities in an ultra-short gate device.
Career Highlights
Mohnkern is currently employed at BAE Systems Information and Electronic Systems Integration Inc. His work at this esteemed company has allowed him to push the boundaries of technology and contribute to advancements in electronic systems.
Collaborations
Mohnkern has collaborated with notable colleagues, including Dong Xu and Xiaoping S Yang, who is a woman. These collaborations have further enriched his research and development efforts.
Conclusion
Lee M Mohnkern's innovative contributions to high-power and high-gain ultra-short gate HEMT devices highlight his expertise and commitment to advancing technology. His patents reflect a deep understanding of electronic systems and their potential applications.