The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2013

Filed:

Jul. 07, 2011
Applicants:

Shuang-ji Tsai, Guiren Township, Tainan County, TW;

Dun-nian Yaung, Taipei, TW;

Jeng-shyan Lin, Tainan, TW;

Jen-cheng Liu, Hsin-Chu, TW;

Wen-de Wang, Minsyong Township, Chiayi County, TW;

Yueh-chiou Lin, Longjing Shiang, TW;

Inventors:

Shuang-Ji Tsai, Guiren Township, Tainan County, TW;

Dun-Nian Yaung, Taipei, TW;

Jeng-Shyan Lin, Tainan, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Wen-De Wang, Minsyong Township, Chiayi County, TW;

Yueh-Chiou Lin, Longjing Shiang, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure comprises a device substrate having a front side and a back side; an interconnect structure disposed on the front side of the device substrate; and a bonding pad connected to the interconnect structure. The bonding pad comprises a recessed region in a dielectric material layer; a dielectric mesa of the dielectric material layer interposed between the recessed region; and a metal layer disposed in the recessed region and on the dielectric mesa.


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